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SMD Type
MOSFET
MOS Field Effect Transistor 2SK3899
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low On-state resistance RDS(on)1 = 5.3mU MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mU MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP.
+0.2 8.7-0.2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 84 336 1.5 146 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 48V VGS = 10 V ID =84A ID=42A,VGS(on)=10V,RG=0 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A VGS=4.5V,ID=42A 1.5 35 2.0 70 4.2 4.9 5500 1050 350 19 13 91 10 96 18 23.5 5.3 6.5 Min Typ Max 10 10 2.5 Unit A A V S mU mU pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
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